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ZTX325 Технические параметры
Diodes Incorporated ZTX325 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - RF | |
| Марка | ||
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | E-Line-3 | |
| Weight | 453.59237mg | |
| Transistor Element Material | SILICON | |
| Collector-Emitter Breakdown Voltage | 15V | |
| Number of Elements | 1 Element | |
| Operating Temperature | -55°C~200°C TJ | |
| Packaging | Bulk | |
| Published | 1997 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.21.00.75 | |
| Voltage - Rated DC | 15V | |
| Max Power Dissipation | 350mW | |
| Terminal Form | WIRE | |
| Reach Compliance Code | unknown | |
| Current Rating | 25mA |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Frequency | 1.3GHz | |
| Base Part Number | ZTX325 | |
| Pin Count | 3 | |
| JESD-30 Code | R-PSIP-W3 | |
| Qualification Status | Not Qualified | |
| Element Configuration | Single | |
| Polarity/Channel Type | NPN | |
| Transistor Type | NPN | |
| Collector Emitter Voltage (VCEO) | 15V | |
| Max Collector Current | 50mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 25 @ 2mA 1V | |
| Gain | 53dB | |
| Transition Frequency | 1300MHz | |
| Collector Base Voltage (VCBO) | 30V | |
| Emitter Base Voltage (VEBO) | 2.5V | |
| Continuous Collector Current | 50mA | |
| Collector-Base Capacitance-Max | 1.5pF | |
| Noise Figure (dB Typ @ f) | 5dB @ 500MHz | |
| Height | 4.01mm | |
| Length | 4.77mm | |
| Width | 2.41mm | |
| RoHS Status | RoHS Compliant |
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