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Diodes Incorporated ZTX325STOB technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - RF | |
| Марка | ||
| Mounting Type | Through Hole | |
| Package / Case | E-Line-3, Formed Leads | |
| Surface Mount | NO | |
| Transistor Element Material | SILICON | |
| Current-Collector (Ic) (Max) | 50mA | |
| Number of Elements | 1 Element | |
| Operating Temperature | -55°C~200°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 1997 | |
| JESD-609 Code | e3 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | MATTE TIN | |
| HTS Code | 8541.21.00.75 | |
| Terminal Position | SINGLE | |
| Terminal Form | WIRE |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Peak Reflow Temperature (Cel) | 260 | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Base Part Number | ZTX325 | |
| Pin Count | 3 | |
| JESD-30 Code | R-PSIP-W3 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE | |
| Power - Max | 350mW | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | NPN | |
| Transistor Type | NPN | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 25 @ 2mA 1V | |
| Gain | 53dB | |
| Voltage - Collector Emitter Breakdown (Max) | 15V | |
| Transition Frequency | 1300MHz | |
| Frequency - Transition | 1.3GHz | |
| Highest Frequency Band | ULTRA HIGH FREQUENCY B | |
| Collector-Base Capacitance-Max | 0.85pF | |
| Noise Figure (dB Typ @ f) | 5dB @ 500MHz |