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ZTX325STOB Технические параметры

Diodes Incorporated  ZTX325STOB technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка
Mounting Type Through Hole
Package / Case E-Line-3, Formed Leads
Surface Mount NO
Transistor Element Material SILICON
Current-Collector (Ic) (Max) 50mA
Number of Elements 1 Element
Operating Temperature -55°C~200°C TJ
Packaging Tape & Reel (TR)
Published 1997
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish MATTE TIN
HTS Code 8541.21.00.75
Terminal Position SINGLE
Terminal Form WIRE
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number ZTX325
Pin Count 3
JESD-30 Code R-PSIP-W3
Qualification Status Not Qualified
Configuration SINGLE
Power - Max 350mW
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 2mA 1V
Gain 53dB
Voltage - Collector Emitter Breakdown (Max) 15V
Transition Frequency 1300MHz
Frequency - Transition 1.3GHz
Highest Frequency Band ULTRA HIGH FREQUENCY B
Collector-Base Capacitance-Max 0.85pF
Noise Figure (dB Typ @ f) 5dB @ 500MHz

ZTX325STOB Документы

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