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ZTX455QSTZ Технические параметры

Diodes Incorporated  ZTX455QSTZ technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка
Mounting Type Through Hole
Package / Case E-Line-3, Formed Leads
Supplier Device Package E-Line (TO-92 compatible)
Mfr Diodes Incorporated
Package Tape & Box (TB)
Product Status Active
Current-Collector (Ic) (Max) 1 A
Factory Pack QuantityFactory Pack Quantity 4000
Manufacturer Diodes Incorporated
Brand Diodes Incorporated
Свойство продукта Значение свойства
Series -
Operating Temperature -55°C ~ 200°C (TJ)
Subcategory Transistors
Power - Max 1 W
Product Type BJTs - Bipolar Transistors
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 10V
Current - Collector Cutoff (Max) 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic 700mV @ 15mA, 150mA
Voltage - Collector Emitter Breakdown (Max) 140 V
Frequency - Transition 100MHz
Product Category Bipolar Transistors - BJT
Просмотр сходства
ZTX455QSTZ brand manufacturers: Diodes Incorporated, Anli stock, ZTX455QSTZ reference price.Diodes Incorporated. ZTX455QSTZ parameters, ZTX455QSTZ Datasheet PDF and pin diagram description download.You can use the ZTX455QSTZ Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find ZTX455QSTZ pin diagram and circuit diagram and usage method of function,ZTX455QSTZ electronics tutorials.You can download from the Anli.