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ZTX550STOB Технические параметры

Diodes Incorporated  ZTX550STOB technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка
Mount Through Hole
Mounting Type Through Hole
Package / Case E-Line-3, Formed Leads
Weight 453.59237mg
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 45V
Collector-Emitter Saturation Voltage -250mV
Current-Collector (Ic) (Max) 1A
Number of Elements 1 Element
Operating Temperature -55°C~200°C TJ
Packaging Tape & Reel (TR)
Published 1997
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
HTS Code 8541.29.00.75
Voltage - Rated DC -45V
Max Power Dissipation 1W
Terminal Form WIRE
Peak Reflow Temperature (Cel) 260
Свойство продукта Значение свойства
Current Rating -1A
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number ZTX550
Pin Count 3
JESD-30 Code R-PSIP-W3
Qualification Status Not Qualified
Element Configuration Single
Transistor Application SWITCHING
Gain Bandwidth Product 150MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 250mV
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 10V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 250mV @ 15mA, 150mA
Transition Frequency 150MHz
Collector Base Voltage (VCBO) -60V
Emitter Base Voltage (VEBO) -5V
Continuous Collector Current -1A
Height 4.01mm
Length 4.77mm
Width 2.41mm
RoHS Status RoHS Compliant
Lead Free Lead Free

ZTX550STOB Документы

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