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ZTX653STOA Технические параметры

Diodes Incorporated  ZTX653STOA technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка
Mount Through Hole
Mounting Type Through Hole
Package / Case E-Line-3, Formed Leads
Weight 453.59237mg
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 100V
Number of Elements 1 Element
Published 2016
Operating Temperature -55°C~200°C TJ
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish MATTE TIN
HTS Code 8541.29.00.75
Voltage - Rated DC 100V
Max Power Dissipation 1W
Terminal Form WIRE
Peak Reflow Temperature (Cel) 260
Current Rating 2A
Time@Peak Reflow Temperature-Max (s) 40
Свойство продукта Значение свойства
Base Part Number ZTX653
Pin Count 3
Reference Standard CECC
JESD-30 Code R-PSIP-W3
Qualification Status Not Qualified
Element Configuration Single
Transistor Application SWITCHING
Gain Bandwidth Product 175MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 500mV
Max Collector Current 2A
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 200mA, 2A
Transition Frequency 140MHz
Collector Base Voltage (VCBO) 120V
Emitter Base Voltage (VEBO) 5V
DC Current Gain-Min (hFE) 25
Continuous Collector Current 2A
Height 4.95mm
Length 4.95mm
Width 3.94mm
RoHS Status RoHS Compliant
Lead Free Lead Free

ZTX653STOA Документы

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