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ZTX658STZ Технические параметры

Diodes Incorporated  ZTX658STZ technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка
Factory Lead Time 15 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case E-Line-3, Formed Leads
Number of Pins 3Pins
Weight 453.59237mg
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 400V
Collector-Emitter Saturation Voltage 500mV
Number of Elements 1 Element
Operating Temperature -55°C~200°C TJ
Packaging Tape & Box (TB)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
HTS Code 8541.29.00.75
Voltage - Rated DC 400V
Max Power Dissipation 1W
Terminal Form WIRE
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) 260
Current Rating 500mA
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number ZTX658
Pin Count 3
Element Configuration Single
Transistor Application SWITCHING
Gain Bandwidth Product 50MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 400V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 100mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 10mA, 100mA
Transition Frequency 50MHz
Collector Base Voltage (VCBO) 400V
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current 500mA
Height 4.01mm
Length 4.77mm
Width 2.41mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

ZTX658STZ Документы

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