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ZTX692BSTZ Технические параметры

Diodes Incorporated  ZTX692BSTZ technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка
Factory Lead Time 15 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case E-Line-3, Formed Leads
Number of Pins 3Pins
Supplier Device Package E-Line (TO-92 compatible)
Weight 453.59237mg
Collector-Emitter Breakdown Voltage 70V
Collector-Emitter Saturation Voltage 500mV
Current-Collector (Ic) (Max) 1A
Number of Elements 1 Element
Operating Temperature -55°C~200°C TJ
Packaging Tape & Box (TB)
Published 2001
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 200°C
Min Operating Temperature -55°C
Voltage - Rated DC 70V
Max Power Dissipation 1W
Current Rating 1A
Frequency 150MHz
Свойство продукта Значение свойства
Base Part Number ZTX692B
Polarity NPN
Element Configuration Single
Power Dissipation 1W
Power - Max 1W
Gain Bandwidth Product 150MHz
Transistor Type NPN
Collector Emitter Voltage (VCEO) 70V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 400 @ 500mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 10mA, 1A
Voltage - Collector Emitter Breakdown (Max) 70V
Frequency - Transition 150MHz
Collector Base Voltage (VCBO) 70V
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current 1A
Height 4.01mm
Length 4.77mm
Width 2.41mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

ZTX692BSTZ Документы

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