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ZTX712 Технические параметры
Diodes Incorporated ZTX712 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Single | |
| Марка | ||
| Mounting Type | Through Hole | |
| Package / Case | E-Line-3 | |
| Mount | Through Hole | |
| Transistor Element Material | SILICON | |
| Number of Elements | 1 Element | |
| Collector-Emitter Breakdown Voltage | 60V | |
| Operating Temperature | -55°C~200°C TJ | |
| Packaging | Bulk | |
| Published | 2012 | |
| JESD-609 Code | e3 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | MATTE TIN | |
| HTS Code | 8541.29.00.95 | |
| Voltage - Rated DC | -60V | |
| Max Power Dissipation | 1W | |
| Terminal Form | WIRE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Current Rating | -1A |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Base Part Number | ZTX712 | |
| Pin Count | 3 | |
| JESD-30 Code | R-PSIP-W3 | |
| Qualification Status | Not Qualified | |
| Polarity | PNP | |
| Element Configuration | Single | |
| Power - Max | 1W | |
| Transistor Application | SWITCHING | |
| Transistor Type | PNP - Darlington | |
| Collector Emitter Voltage (VCEO) | 1.25V | |
| Max Collector Current | 800mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10000 @ 500mA 5V | |
| Current - Collector Cutoff (Max) | 100nA ICBO | |
| Vce Saturation (Max) @ Ib, Ic | 1.25V @ 8mA, 800mA | |
| Collector Base Voltage (VCBO) | 80V | |
| Emitter Base Voltage (VEBO) | 10V | |
| Width | 2.41mm | |
| Length | 4.77mm | |
| Height | 4.01mm | |
| RoHS Status | Non-RoHS Compliant | |
| Lead Free | Contains Lead |
ZTX712 Документы
- DatasheetsZTX712 ZTX712-Zetex-datasheet-19422.pdf
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