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ZTX853 Технические параметры

Diodes Incorporated  ZTX853 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка
Factory Lead Time 15 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case E-Line-3
Number of Pins 3Pins
Weight 453.59237mg
Transistor Element Material SILICON
Manufacturer Package Identifier E-Line
Collector-Emitter Breakdown Voltage 100V
Collector-Emitter Saturation Voltage 160mV
Number of Elements 1 Element
hFEMin 100
Operating Temperature -55°C~200°C TJ
Packaging Bulk
Published 2012
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Voltage - Rated DC 100V
Max Power Dissipation 1.2W
Terminal Form WIRE
Peak Reflow Temperature (Cel) 260
Свойство продукта Значение свойства
Current Rating 4A
Frequency 130MHz
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number ZTX853
Pin Count 3
Element Configuration Single
Power Dissipation 1.2W
Transistor Application SWITCHING
Gain Bandwidth Product 130MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 2A 2V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 200mV @ 400mA, 4A
Transition Frequency 130MHz
Collector Base Voltage (VCBO) 200V
Emitter Base Voltage (VEBO) 6V
Continuous Collector Current 4A
Height 4.01mm
Length 4.77mm
Width 2.41mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

ZTX853 Документы

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