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ZTX853QSTZ Технические параметры

Diodes Incorporated  ZTX853QSTZ technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка
Mounting Type Through Hole
Package / Case E-Line-3, Formed Leads
Supplier Device Package E-Line (TO-92 compatible)
Mfr Diodes Incorporated
Package Tape & Box (TB)
Product Status Active
Current-Collector (Ic) (Max) 4 A
Factory Pack QuantityFactory Pack Quantity 4000
Manufacturer Diodes Incorporated
Brand Diodes Incorporated
Свойство продукта Значение свойства
Series -
Operating Temperature -55°C ~ 200°C (TJ)
Subcategory Transistors
Power - Max 1.2 W
Product Type BJTs - Bipolar Transistors
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 2A, 2V
Current - Collector Cutoff (Max) 50nA
Vce Saturation (Max) @ Ib, Ic 200mV @ 400mA, 4A
Voltage - Collector Emitter Breakdown (Max) 100 V
Frequency - Transition 130MHz
Product Category Bipolar Transistors - BJT
Просмотр сходства
ZTX853QSTZ brand manufacturers: Diodes Incorporated, Anli stock, ZTX853QSTZ reference price.Diodes Incorporated. ZTX853QSTZ parameters, ZTX853QSTZ Datasheet PDF and pin diagram description download.You can use the ZTX853QSTZ Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find ZTX853QSTZ pin diagram and circuit diagram and usage method of function,ZTX853QSTZ electronics tutorials.You can download from the Anli.