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ZTX857STOA Технические параметры

Diodes Incorporated  ZTX857STOA technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка
Mount Through Hole
Mounting Type Through Hole
Package / Case E-Line-3
Weight 453.59237mg
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 300V
Number of Elements 1 Element
Operating Temperature -55°C~200°C TJ
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish MATTE TIN
HTS Code 8541.29.00.75
Voltage - Rated DC 300V
Max Power Dissipation 1.2W
Terminal Form WIRE
Peak Reflow Temperature (Cel) 260
Current Rating 5A
Time@Peak Reflow Temperature-Max (s) 40
Свойство продукта Значение свойства
Base Part Number ZTX857
Pin Count 3
JESD-30 Code R-PSIP-W3
Qualification Status Not Qualified
Element Configuration Single
Transistor Application SWITCHING
Gain Bandwidth Product 80MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 250mV
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 500mA 10V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 250mV @ 600mA, 3A
Transition Frequency 80MHz
Collector Base Voltage (VCBO) 330V
Emitter Base Voltage (VEBO) 6V
Continuous Collector Current 3A
Height 4.01mm
Length 4.77mm
Width 2.41mm
RoHS Status RoHS Compliant
Lead Free Lead Free

ZTX857STOA Документы

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