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ZTX857STZ Технические параметры

Diodes Incorporated  ZTX857STZ technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка
Factory Lead Time 15 Weeks
Mount Surface Mount, Through Hole
Mounting Type Through Hole
Package / Case E-Line-3, Formed Leads
Number of Pins 3Pins
Weight 453.59237mg
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 300V
Collector-Emitter Saturation Voltage 250mV
Number of Elements 1 Element
Operating Temperature -55°C~200°C TJ
Packaging Tape & Box (TB)
Published 2006
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Voltage - Rated DC 300V
Max Power Dissipation 1.2W
Terminal Form WIRE
Peak Reflow Temperature (Cel) 260
Current Rating 5A
Свойство продукта Значение свойства
Frequency 80MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number ZTX857
Pin Count 3
Element Configuration Single
Power Dissipation 1.2W
Transistor Application SWITCHING
Gain Bandwidth Product 80MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 300V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 500mA 10V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 250mV @ 600mA, 3A
Transition Frequency 80MHz
Max Breakdown Voltage 300V
Collector Base Voltage (VCBO) 330V
Emitter Base Voltage (VEBO) 6V
Continuous Collector Current 3A
Height 4.01mm
Length 4.77mm
Width 2.41mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

ZTX857STZ Документы

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