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ZTX949STZ Технические параметры

Diodes Incorporated  ZTX949STZ technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка
Factory Lead Time 15 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case E-Line-3, Formed Leads
Number of Pins 3Pins
Weight 453.59237mg
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 30V
Number of Elements 1 Element
Operating Temperature -55°C~200°C TJ
Packaging Tape & Box (TB)
Published 2006
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Voltage - Rated DC -30V
Max Power Dissipation 1.2W
Terminal Form WIRE
Peak Reflow Temperature (Cel) 260
Current Rating -4.5A
Frequency 100MHz
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number ZTX949
Pin Count 3
Element Configuration Single
Power Dissipation 1.2W
Power - Max 1.58W
Transistor Application SWITCHING
Gain Bandwidth Product 100MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 4.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1A 1V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 320mV @ 300mA, 5A
Transition Frequency 100MHz
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 6V
Continuous Collector Current -4.5A
Height 4.01mm
Length 4.77mm
Width 2.41mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

ZTX949STZ Документы

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