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ZVN2106GTC Технические параметры

Diodes Incorporated  ZVN2106GTC technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Weight 7.994566mg
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 710mA Ta
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 2W Ta
Turn Off Delay Time 12 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4Terminations
ECCN Code EAR99
Terminal Finish MATTE TIN
Voltage - Rated DC 60V
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code unknown
Current Rating 710mA
Time@Peak Reflow Temperature-Max (s) 40
Свойство продукта Значение свойства
Pin Count 4
JESD-30 Code R-PDSO-G4
Qualification Status Not Qualified
Configuration SINGLE
Number of Channels 1Channel
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Case Connection DRAIN
Turn On Delay Time 7 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2 Ω @ 1A, 10V
Vgs(th) (Max) @ Id 2.4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 75pF @ 18V
Rise Time 8ns
Vgs (Max) ±20V
Fall Time (Typ) 15 ns
Continuous Drain Current (ID) 710mA
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 2Ohm
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 8A
Height 1.65mm
Length 6.7mm
Width 3.7mm
RoHS Status RoHS Compliant
Lead Free Lead Free

ZVN2106GTC Документы

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