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ZVN3310ASTZ Технические параметры

Diodes Incorporated  ZVN3310ASTZ technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 17 Weeks
Package / Case E-Line-3
Mounting Type Through Hole
Mount Through Hole
Number of Pins 3Pins
Weight 453.59237mg
Transistor Element Material SILICON
Power Dissipation (Max) 625mW Ta
Turn Off Delay Time 6 ns
Number of Elements 1 Element
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25℃ 200mA Ta
Published 2012
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Voltage - Rated DC 100V
Terminal Form WIRE
Peak Reflow Temperature (Cel) 260
Свойство продукта Значение свойства
Current Rating 200mA
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Number of Channels 1Channel
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 625mW
Turn On Delay Time 5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 10 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 2.4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 40pF @ 25V
Rise Time 7ns
Vgs (Max) ±20V
Fall Time (Typ) 7 ns
Continuous Drain Current (ID) 200mA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.2A
Drain to Source Breakdown Voltage 100V
Width 2.41mm
Length 4.77mm
Height 4.01mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

ZVN3310ASTZ Документы

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