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ZVN3320ASTZ Технические параметры

Diodes Incorporated  ZVN3320ASTZ technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mount Through Hole
Mounting Type Through Hole
Package / Case E-Line-3
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 100mA Ta
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 625mW Ta
Packaging Tape & Box (TB)
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
HTS Code 8541.29.00.95
Voltage - Rated DC 200V
Terminal Position SINGLE
Terminal Form WIRE
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) 260
Current Rating 100mA
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
JESD-30 Code R-PSIP-W3
Qualification Status Not Qualified
Configuration SINGLE
Operating Mode ENHANCEMENT MODE
Power Dissipation 330mW
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 25 Ω @ 100mA, 10V
Vgs(th) (Max) @ Id 3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 45pF @ 25V
Vgs (Max) ±20V
Continuous Drain Current (ID) 100mA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.1A
Drain to Source Breakdown Voltage 200V
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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