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ZVN4525E6TC Технические параметры

Diodes Incorporated  ZVN4525E6TC technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6
Weight 14.996898mg
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 230mA Ta
Drive Voltage (Max Rds On, Min Rds On) 2.4V 10V
Number of Elements 1 Element
Power Dissipation (Max) 1.1W Ta
Turn Off Delay Time 11.4 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Voltage - Rated DC 250V
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 230mA
Time@Peak Reflow Temperature-Max (s) 30
Свойство продукта Значение свойства
Pin Count 6
JESD-30 Code R-PDSO-G6
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1Channel
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.1W
Turn On Delay Time 1.25 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8.5 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 1.8V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 72pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 3.65nC @ 10V
Rise Time 1.7ns
Vgs (Max) ±40V
Fall Time (Typ) 1.7 ns
Continuous Drain Current (ID) 230mA
Gate to Source Voltage (Vgs) 40V
Drain Current-Max (Abs) (ID) 0.23A
Drain to Source Breakdown Voltage 250V
Height 1.3mm
Length 3.1mm
Width 1.8mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free

ZVN4525E6TC Документы

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