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ZVNL120CSTZ Технические параметры

Diodes Incorporated  ZVNL120CSTZ technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mount Through Hole
Mounting Type Through Hole
Package / Case E-Line-3
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 180mA Ta
Drive Voltage (Max Rds On, Min Rds On) 3V 5V
Number of Elements 1 Element
Power Dissipation (Max) 700mW Ta
Packaging Tape & Box (TB)
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish MATTE TIN
HTS Code 8541.29.00.95
Voltage - Rated DC 200V
Terminal Position SINGLE
Terminal Form WIRE
Peak Reflow Temperature (Cel) 260
Свойство продукта Значение свойства
Reach Compliance Code unknown
Current Rating 180mA
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
JESD-30 Code R-PSIP-W3
Qualification Status Not Qualified
Configuration SINGLE
Operating Mode ENHANCEMENT MODE
Power Dissipation 700mW
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 10 Ω @ 250mA, 5V
Vgs(th) (Max) @ Id 1.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 85pF @ 25V
Vgs (Max) ±20V
Continuous Drain Current (ID) 180mA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.18A
Drain to Source Breakdown Voltage 200V
RoHS Status RoHS Compliant
Lead Free Lead Free

ZVNL120CSTZ Документы

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