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ZX3CDBS1M832TA Технические параметры

Diodes Incorporated  ZX3CDBS1M832TA technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-VDFN Exposed Pad
Number of Pins 832Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 20V
Number of Elements 1 Element
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 10Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Max Power Dissipation 3W
Terminal Position QUAD
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Frequency 140MHz
Time@Peak Reflow Temperature-Max (s) 40
Свойство продукта Значение свойства
Base Part Number ZX3CDBS1M832
Pin Count 10
Qualification Status Not Qualified
Polarity NPN
Element Configuration Single
Power Dissipation 3W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 140MHz
Transistor Type NPN + Diode (Isolated)
Collector Emitter Voltage (VCEO) 20V
Max Collector Current 4.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2A 2V
Current - Collector Cutoff (Max) 25nA
Vce Saturation (Max) @ Ib, Ic 270mV @ 125mA, 4.5A
Transition Frequency 140MHz
Max Breakdown Voltage 20V
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) -7.5V
Height 1mm
Length 3mm
Width 2mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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ZX3CDBS1M832TA Документы

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