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ZXM61N02FTA Технические параметры

Diodes Incorporated  ZXM61N02FTA technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 17 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3Pins
Weight 7.994566mg
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 1.7A Ta
Drive Voltage (Max Rds On, Min Rds On) 2.7V 4.5V
Number of Elements 1 Element
Power Dissipation (Max) 625mW Ta
Turn Off Delay Time 7.8 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Termination SMD/SMT
ECCN Code EAR99
Resistance 180mOhm
Terminal Finish Matte Tin (Sn)
Additional Feature LOW THRESHOLD
Voltage - Rated DC 20V
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Свойство продукта Значение свойства
Current Rating 1.7A
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Number of Channels 1Channel
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 806mW
Turn On Delay Time 2.4 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 180m Ω @ 930mA, 4.5V
Vgs(th) (Max) @ Id 700mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 160pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 3.4nC @ 4.5V
Rise Time 4.2ns
Vgs (Max) ±12V
Fall Time (Typ) 4.2 ns
Continuous Drain Current (ID) 1.7A
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 20V
Dual Supply Voltage 20V
Max Junction Temperature (Tj) 150°C
Nominal Vgs 700 mV
Height 1.1mm
Length 3.04mm
Width 1.4mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

ZXM61N02FTA Документы

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