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ZXM64N02XTC Технические параметры
Diodes Incorporated ZXM64N02XTC technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ||
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | |
| Weight | 139.989945mg | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 5.4A Ta | |
| Drive Voltage (Max Rds On, Min Rds On) | 2.7V 4.5V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 1.1W Ta | |
| Turn Off Delay Time | 28.3 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| JESD-609 Code | e3 | |
| Pbfree Code | no | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 8Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Matte Tin (Sn) | |
| Additional Feature | LOW THRESHOLD | |
| Voltage - Rated DC | 20V | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Current Rating | 5.4A |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Pin Count | 8 | |
| JESD-30 Code | S-PDSO-G8 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Number of Channels | 1Channel | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 1.1W | |
| Turn On Delay Time | 5.7 ns | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 40m Ω @ 3.8A, 4.5V | |
| Vgs(th) (Max) @ Id | 700mV @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 1100pF @ 15V | |
| Gate Charge (Qg) (Max) @ Vgs | 16nC @ 4.5V | |
| Rise Time | 9.6ns | |
| Vgs (Max) | ±12V | |
| Fall Time (Typ) | 9.6 ns | |
| Continuous Drain Current (ID) | 5.4A | |
| Gate to Source Voltage (Vgs) | 12V | |
| Drain-source On Resistance-Max | 0.04Ohm | |
| Drain to Source Breakdown Voltage | 20V | |
| Height | 950μm | |
| Length | 3.1mm | |
| Width | 3.1mm | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
ZXM64N02XTC Документы
- DatasheetsZXM64N02X
Индекс :
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