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ZXM66P03N8TA Технические параметры

Diodes Incorporated  ZXM66P03N8TA technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 10 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8Pins
Weight 73.992255mg
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 6.25A Ta
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 1.56W Ta
Turn Off Delay Time 94.6 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
ECCN Code EAR99
Resistance 25mOhm
Terminal Finish Matte Tin (Sn)
Voltage - Rated DC -30V
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Свойство продукта Значение свойства
Current Rating -7.9A
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1Channel
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Turn On Delay Time 7.6 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 25m Ω @ 5.6A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1979pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 36nC @ 5V
Rise Time 16.3ns
Drain to Source Voltage (Vdss) 30V
Vgs (Max) ±20V
Fall Time (Typ) 39.6 ns
Continuous Drain Current (ID) 7.9A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 6.25A
Drain to Source Breakdown Voltage -30V
Height 1.5mm
Length 5mm
Width 4mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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ZXM66P03N8TA Документы

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