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Diodes Incorporated ZXMC3AM832TA technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
Свойство продукта | Значение свойства | |
---|---|---|
Классификация | Transistors - FETs, MOSFETs - Arrays | |
Марка | ||
Mount | Surface Mount | |
Mounting Type | Surface Mount | |
Package / Case | 8-VDFN Exposed Pad | |
Number of Pins | 8Pins | |
Weight | 299.994654mg | |
Transistor Element Material | SILICON | |
Current - Continuous Drain (Id) @ 25℃ | 2.9A 2.1A | |
Number of Elements | 2 Elements | |
Turn Off Delay Time | 11.3 ns | |
Packaging | Tape & Reel (TR) | |
JESD-609 Code | e3 | |
Part Status | Obsolete | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Number of Terminations | 8Terminations | |
ECCN Code | EAR99 | |
Terminal Finish | Matte Tin (Sn) | |
Additional Feature | LOW THRESHOLD | |
Max Power Dissipation | 1.7W | |
Terminal Position | DUAL | |
Terminal Form | FLAT | |
Peak Reflow Temperature (Cel) | 260 | |
Time@Peak Reflow Temperature-Max (s) | 40 | |
Pin Count | 8 |
Свойство продукта | Значение свойства | |
---|---|---|
Qualification Status | Not Qualified | |
Operating Mode | ENHANCEMENT MODE | |
Power Dissipation | 2.45W | |
Turn On Delay Time | 1.5 ns | |
FET Type | N and P-Channel | |
Transistor Application | SWITCHING | |
Rds On (Max) @ Id, Vgs | 120m Ω @ 2.5A, 10V | |
Vgs(th) (Max) @ Id | 1V @ 250μA (Min) | |
Input Capacitance (Ciss) (Max) @ Vds | 190pF @ 25V | |
Gate Charge (Qg) (Max) @ Vgs | 3.9nC @ 10V | |
Rise Time | 2.8ns | |
Polarity/Channel Type | N-CHANNEL AND P-CHANNEL | |
Fall Time (Typ) | 7.5 ns | |
Continuous Drain Current (ID) | 2.1A | |
Gate to Source Voltage (Vgs) | 20V | |
Drain Current-Max (Abs) (ID) | 3.7A | |
Drain to Source Breakdown Voltage | 30V | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
FET Feature | Logic Level Gate | |
Height | 1mm | |
Length | 3mm | |
Width | 2mm | |
RoHS Status | ROHS3 Compliant | |
Lead Free | Lead Free |