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ZXMC3AMCTA Технические параметры

Diodes Incorporated  ZXMC3AMCTA technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Factory Lead Time 17 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-WDFN Exposed Pad
Number of Pins 8Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 2.9A 2.1A
Number of Elements 2 Elements
Turn Off Delay Time 11.3 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2010
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
ECCN Code EAR99
Resistance 210mOhm
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Additional Feature HIGH RELIABILITY
Max Power Dissipation 1.7W
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
Свойство продукта Значение свойства
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.45W
Case Connection DRAIN
Turn On Delay Time 1.5 ns
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 120m Ω @ 2.5A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 190pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 3.9nC @ 10V
Rise Time 2.8ns
Drain to Source Voltage (Vdss) 30V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 7.5 ns
Continuous Drain Current (ID) 2.1A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 3.7A
Drain to Source Breakdown Voltage -30V
Pulsed Drain Current-Max (IDM) 13A
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Height 780μm
Length 3.08mm
Width 2.075mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

ZXMC3AMCTA Документы

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