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ZXMC3F31DN8TA Технические параметры

Diodes Incorporated  ZXMC3F31DN8TA technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Factory Lead Time 17 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 6.8A 4.9A
Number of Elements 2 Elements
Turn Off Delay Time 30 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Max Power Dissipation 1.8W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.1W
Turn On Delay Time 1.9 ns
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 24m Ω @ 7A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 608pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 12.9nC @ 10V
Rise Time 3ns
Drain to Source Voltage (Vdss) 30V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 21 ns
Continuous Drain Current (ID) 4.9A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 5.7A
Drain to Source Breakdown Voltage -30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate, 4.5V Drive
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant

ZXMC3F31DN8TA Документы

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