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ZXMC4A16DN8TA Технические параметры

Diodes Incorporated  ZXMC4A16DN8TA technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8Pins
Weight 73.992255mg
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 5.2A Ta 4.7A Ta
Number of Elements 2 Elements
Turn Off Delay Time 33 ns
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
ECCN Code EAR99
Resistance 60mOhm
Terminal Finish Matte Tin (Sn)
Max Power Dissipation 1.8W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 4.7A
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 8
Свойство продукта Значение свойства
Number of Channels 2Channels
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.1W
Turn On Delay Time 3.7 ns
FET Type N and P-Channel Complementary
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 50m Ω @ 4.5A, 10V, 60m Ω @ 3.8A, 10V
Vgs(th) (Max) @ Id 1V @ 250mA (Min)
Input Capacitance (Ciss) (Max) @ Vds 770pF @ 40V 1000pF @ 20V
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Rise Time 5.5ns
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 18 ns
Continuous Drain Current (ID) 5.2A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 4A
Drain to Source Breakdown Voltage 40V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Height 1.5mm
Length 5mm
Width 4mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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ZXMC4A16DN8TA Документы

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