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ZXMC6A09DN8TA Технические параметры

Diodes Incorporated  ZXMC6A09DN8TA technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Factory Lead Time 17 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8Pins
Weight 73.992255mg
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 3.9A 3.7A
Number of Elements 2 Elements
Turn Off Delay Time 55 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
ECCN Code EAR99
Resistance 55mOhm
Terminal Finish Matte Tin (Sn)
Additional Feature LOW THRESHOLD
Max Power Dissipation 2.1W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 5.1A
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
Number of Channels 2Channels
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.1W
Turn On Delay Time 4.6 ns
Power - Max 1.8W
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 45m Ω @ 8.2A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA (Min)
Input Capacitance (Ciss) (Max) @ Vds 1407pF @ 40V
Gate Charge (Qg) (Max) @ Vgs 24.2nC @ 10V
Rise Time 5.8ns
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 23 ns
Continuous Drain Current (ID) 5.1A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 3.9A
Drain to Source Breakdown Voltage 60V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Height 1.5mm
Length 5mm
Width 4mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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ZXMC6A09DN8TA Документы

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