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ZXMHC10A07N8TC Технические параметры

Diodes Incorporated  ZXMHC10A07N8TC technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Factory Lead Time 17 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8Pins
Weight 73.992255mg
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 800mA 680mA
Number of Elements 4 Elements
Turn Off Delay Time 5.9 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Max Power Dissipation 870mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number ZXMHC10A07
Свойство продукта Значение свойства
Pin Count 8
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.36W
Turn On Delay Time 1.6 ns
FET Type 2 N and 2 P-Channel (H-Bridge)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 700m Ω @ 1.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 138pF @ 60V
Gate Charge (Qg) (Max) @ Vgs 2.9nC @ 10V
Rise Time 2.1ns
Drain to Source Voltage (Vdss) 100V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 3.3 ns
Continuous Drain Current (ID) 1A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 1A
Drain-source On Resistance-Max 0.7Ohm
Drain to Source Breakdown Voltage -100V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
Height 1.5mm
Length 5mm
Width 4mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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ZXMHC10A07N8TC Документы

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