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ZXMHC3A01N8TC Технические параметры

Diodes Incorporated  ZXMHC3A01N8TC technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Factory Lead Time 17 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8Pins
Weight 73.992255mg
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 2.17A 1.64A
Number of Elements 4 Elements
Turn Off Delay Time 12.1 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
ECCN Code EAR99
Resistance 125mOhm
Terminal Finish Matte Tin (Sn)
Max Power Dissipation 870mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Свойство продукта Значение свойства
Base Part Number ZXMHC3A01
Pin Count 8
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.36W
FET Type 2 N and 2 P-Channel (H-Bridge)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 125m Ω @ 2.5A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 190pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 3.9nC @ 10V
Rise Time 2.3ns
Drain to Source Voltage (Vdss) 30V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 2.9 ns
Continuous Drain Current (ID) 1.64A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 2.17A
DS Breakdown Voltage-Min 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Height 1.5mm
Length 5mm
Width 4mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

ZXMHC3A01N8TC Документы

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