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ZXMHC3F381N8TC Технические параметры

Diodes Incorporated  ZXMHC3F381N8TC technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Factory Lead Time 17 Weeks
Package / Case 8-SOIC (0.154, 3.90mm Width)
Mounting Type Surface Mount
Mount Surface Mount
Number of Pins 8Pins
Weight 73.992255mg
Transistor Element Material SILICON
Turn Off Delay Time 30 ns
Number of Elements 4 Elements
Current - Continuous Drain (Id) @ 25℃ 3.98A 3.36A
Published 2009
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
ECCN Code EAR99
Resistance 55mOhm
Terminal Finish Matte Tin (Sn)
Max Power Dissipation 870mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Свойство продукта Значение свойства
Base Part Number ZXMHC3F381
Pin Count 8
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.35W
Turn On Delay Time 1.9 ns
FET Type 2 N and 2 P-Channel (H-Bridge)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 33m Ω @ 5A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 430pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 9nC @ 10V
Rise Time 3ns
Drain to Source Voltage (Vdss) 30V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 21 ns
Continuous Drain Current (ID) 3.36A
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Width 4mm
Length 5mm
Height 1.5mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

ZXMHC3F381N8TC Документы

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