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ZXMHC6A07T8TA Технические параметры

Diodes Incorporated  ZXMHC6A07T8TA technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Factory Lead Time 17 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SMD, Gull Wing
Number of Pins 8Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 1.6A 1.3A
Number of Elements 4 Elements
Turn Off Delay Time 13 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2004
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
ECCN Code EAR99
Resistance 425mOhm
Terminal Finish Matte Tin (Sn)
Voltage - Rated DC 60V
Max Power Dissipation 1.7W
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Current Rating 1.8A
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number ZXMHC6A07T8
Свойство продукта Значение свойства
Pin Count 8
Number of Channels 4Channels
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.7W
Output Current 2.2A
Turn On Delay Time 1.6 ns
Power - Max 1.3W
FET Type 2 N and 2 P-Channel (H-Bridge)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 300m Ω @ 1.8A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 166pF @ 40V
Gate Charge (Qg) (Max) @ Vgs 3.2nC @ 10V
Rise Time 2.3ns
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 5.8 ns
Continuous Drain Current (ID) 1.8A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Height 1.6mm
Length 6.7mm
Width 3.7mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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ZXMHC6A07T8TA Документы

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