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ZXMN10A25GTA Технические параметры

Diodes Incorporated  ZXMN10A25GTA technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 17 Weeks
Package / Case TO-261-4, TO-261AA
Mounting Type Surface Mount
Mount Surface Mount
Weight 7.994566mg
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 2.9A Ta
Drive Voltage (Max Rds On, Min Rds On) 10V
Turn Off Delay Time 18 ns
Power Dissipation (Max) 2W Ta
Number of Elements 1 Element
Published 2006
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4Terminations
ECCN Code EAR99
Resistance 125mOhm
Terminal Finish Matte Tin (Sn)
Additional Feature FAST SWITCHING
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Свойство продукта Значение свойства
Pin Count 4
JESD-30 Code R-PDSO-G4
Number of Channels 1Channel
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.9W
Case Connection DRAIN
Turn On Delay Time 4.9 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 125m Ω @ 2.9A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 859pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Rise Time 3.7ns
Vgs (Max) ±20V
Fall Time (Typ) 9.4 ns
Continuous Drain Current (ID) 4A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 2.9A
Drain to Source Breakdown Voltage 100V
Height 1.65mm
Width 3.7mm
Length 6.7mm
RoHS Status ROHS3 Compliant
Radiation Hardening No
REACH SVHC No SVHC
Lead Free Lead Free

ZXMN10A25GTA Документы

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