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ZXMN2A02N8TA Технические параметры

Diodes Incorporated  ZXMN2A02N8TA technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8Pins
Weight 73.992255mg
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 8.3A Ta
Drive Voltage (Max Rds On, Min Rds On) 2.5V 4.5V
Number of Elements 1 Element
Power Dissipation (Max) 1.56W Ta
Turn Off Delay Time 33.3 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
ECCN Code EAR99
Resistance 20mOhm
Terminal Finish Matte Tin (Sn)
Additional Feature LOW THRESHOLD
Voltage - Rated DC 20V
Terminal Position DUAL
Свойство продукта Значение свойства
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 10.2A
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1Channel
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Turn On Delay Time 7.9 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 20m Ω @ 11A, 4.5V
Vgs(th) (Max) @ Id 700mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1900pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 18.9nC @ 4.5V
Rise Time 10ns
Vgs (Max) ±12V
Fall Time (Typ) 10 ns
Continuous Drain Current (ID) 10.2A
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 20V
Pulsed Drain Current-Max (IDM) 50A
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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ZXMN2A02N8TA Документы

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