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ZXMN2A04DN8TA Технические параметры

Diodes Incorporated  ZXMN2A04DN8TA technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Factory Lead Time 17 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8Pins
Weight 73.992255mg
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 5.9A
Number of Elements 2 Elements
Turn Off Delay Time 50.5 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
ECCN Code EAR99
Resistance 25mOhm
Terminal Finish Matte Tin (Sn)
Additional Feature LOW THRESHOLD
Voltage - Rated DC 20V
Max Power Dissipation 2.1W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 6A
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
Number of Channels 2Channels
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.1W
Turn On Delay Time 7.9 ns
Power - Max 1.8W
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 25m Ω @ 5.9A, 4.5V
Vgs(th) (Max) @ Id 700mV @ 250μA (Min)
Input Capacitance (Ciss) (Max) @ Vds 1880pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 22.1nC @ 5V
Rise Time 14.8ns
Fall Time (Typ) 30.6 ns
Continuous Drain Current (ID) 7.7A
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 5.9A
Drain to Source Breakdown Voltage 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Height 1.5mm
Length 5mm
Width 4mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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ZXMN2A04DN8TA Документы

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