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ZXMN3A01ZTA Технические параметры

Diodes Incorporated  ZXMN3A01ZTA technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 17 Weeks
Package / Case TO-243AA
Mounting Type Surface Mount
Mount Surface Mount
Weight 130.492855mg
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 2.2A Ta
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Power Dissipation (Max) 970mW Ta
Number of Elements 1 Element
Turn Off Delay Time 13.5 ns
Published 2012
Packaging Cut Tape (CT)
Operating Temperature -55°C~150°C TJ
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Resistance 120mOhm
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Terminal Position SINGLE
Свойство продукта Значение свойства
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
JESD-30 Code R-PSSO-F3
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1Channel
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 2.6 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 120m Ω @ 2.5A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 186pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 5nC @ 10V
Rise Time 4.1ns
Vgs (Max) ±20V
Fall Time (Typ) 3.6 ns
Continuous Drain Current (ID) 2.2A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 3.3A
Drain to Source Breakdown Voltage 30V
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Lead Free Lead Free

ZXMN3A01ZTA Документы

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