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ZXMN3B04N8TC Технические параметры

Diodes Incorporated  ZXMN3B04N8TC technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8Pins
Weight 73.992255mg
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 7.2A Ta
Drive Voltage (Max Rds On, Min Rds On) 2.5V 4.5V
Number of Elements 1 Element
Power Dissipation (Max) 2W Ta
Turn Off Delay Time 40 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2004
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Voltage - Rated DC 30V
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Свойство продукта Значение свойства
Current Rating 7.6A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 8
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1Channel
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Turn On Delay Time 9 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 25m Ω @ 7.2A, 4.5V
Vgs(th) (Max) @ Id 700mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2480pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 23.1nC @ 4.5V
Rise Time 11.5ns
Vgs (Max) ±12V
Fall Time (Typ) 16.6 ns
Continuous Drain Current (ID) 7.2A
Gate to Source Voltage (Vgs) 12V
Drain-source On Resistance-Max 0.025Ohm
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 45A
RoHS Status RoHS Compliant
Lead Free Lead Free

ZXMN3B04N8TC Документы

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