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ZXMN6A08E6TA Технические параметры

Diodes Incorporated  ZXMN6A08E6TA technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 17 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6
Number of Pins 6Pins
Weight 14.996898mg
Transistor Element Material SILICON
Manufacturer Package Identifier SOT26 (SC74R)
Current - Continuous Drain (Id) @ 25℃ 2.8A Ta
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 1.1W Ta
Turn Off Delay Time 12.3 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2002
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Resistance 80mOhm
Terminal Finish Matte Tin (Sn)
Additional Feature LOW THRESHOLD
Voltage - Rated DC 60V
Terminal Position DUAL
Terminal Form GULL WING
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) 260
Current Rating 2.5A
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 6
Number of Channels 1Channel
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.1W
Turn On Delay Time 2.6 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 80m Ω @ 4.8A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 459pF @ 40V
Gate Charge (Qg) (Max) @ Vgs 5.8nC @ 10V
Rise Time 2.1ns
Vgs (Max) ±20V
Fall Time (Typ) 2.1 ns
Continuous Drain Current (ID) 3.5A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 2.8A
Drain to Source Breakdown Voltage 60V
Max Junction Temperature (Tj) 150°C
Height 1.4mm
Length 3.1mm
Width 1.8mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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ZXMN6A08E6TA Документы

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