Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок 
Есть складские запасы
Min. : 1
Mult. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
ZXT12N50DXTC Технические параметры
Diodes Incorporated ZXT12N50DXTC technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Arrays | |
| Марка | ||
| Factory Lead Time | 15 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | |
| Number of Pins | 8Pins | |
| Weight | 139.989945mg | |
| Transistor Element Material | SILICON | |
| Collector-Emitter Breakdown Voltage | 50V | |
| Collector-Emitter Saturation Voltage | 135mV | |
| Number of Elements | 2 Elements | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2006 | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 8Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Matte Tin (Sn) | |
| Voltage - Rated DC | 50V | |
| Max Power Dissipation | 1.04W | |
| Terminal Form | GULL WING |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Peak Reflow Temperature (Cel) | 260 | |
| Current Rating | 3A | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Base Part Number | ZXT12N50D | |
| Pin Count | 8 | |
| Polarity | NPN | |
| Element Configuration | Dual | |
| Transistor Application | SWITCHING | |
| Gain Bandwidth Product | 132MHz | |
| Transistor Type | 2 NPN (Dual) | |
| Collector Emitter Voltage (VCEO) | 50V | |
| Max Collector Current | 3A | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 1A 2V | |
| Current - Collector Cutoff (Max) | 100nA | |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 50mA, 3A | |
| Transition Frequency | 132MHz | |
| Collector Base Voltage (VCBO) | 100V | |
| Emitter Base Voltage (VEBO) | 7.5V | |
| Continuous Collector Current | 3A | |
| Height | 950μm | |
| Length | 3.1mm | |
| Width | 3.1mm | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
ZXT12N50DXTC Документы
- Environmental InformationDiodes RoHS 3 Cert
- DatasheetsZXT12N50DXTC
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ