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ZXT12N50DXTC Технические параметры

Diodes Incorporated  ZXT12N50DXTC technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Arrays
Марка
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
Number of Pins 8Pins
Weight 139.989945mg
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 50V
Number of Elements 2 Elements
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Voltage - Rated DC 50V
Max Power Dissipation 1.04W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Свойство продукта Значение свойства
Current Rating 3A
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number ZXT12N50D
Pin Count 8
Polarity NPN
Element Configuration Dual
Transistor Application SWITCHING
Gain Bandwidth Product 132MHz
Transistor Type 2 NPN (Dual)
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 1A 2V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 50mA, 3A
Transition Frequency 132MHz
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 7.5V
Continuous Collector Current 3A
Height 950μm
Length 3.1mm
Width 3.1mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

ZXT12N50DXTC Документы

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