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Diodes Incorporated ZXT12P12DXTC technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
Свойство продукта | Значение свойства | |
---|---|---|
Классификация | Transistors - Bipolar (BJT) - Arrays | |
Марка | ||
Mount | Surface Mount | |
Mounting Type | Surface Mount | |
Package / Case | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | |
Weight | 139.989945mg | |
Transistor Element Material | SILICON | |
Collector-Emitter Breakdown Voltage | 12V | |
Current-Collector (Ic) (Max) | 3A | |
Number of Elements | 2 Elements | |
Operating Temperature | -55°C~150°C TJ | |
Packaging | Tape & Reel (TR) | |
JESD-609 Code | e3 | |
Pbfree Code | yes | |
Part Status | Obsolete | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Number of Terminations | 8Terminations | |
ECCN Code | EAR99 | |
Terminal Finish | Matte Tin (Sn) | |
Voltage - Rated DC | -12V | |
Max Power Dissipation | 1.04W | |
Terminal Form | GULL WING | |
Peak Reflow Temperature (Cel) | 260 | |
Current Rating | -3A | |
Time@Peak Reflow Temperature-Max (s) | 40 |
Свойство продукта | Значение свойства | |
---|---|---|
Base Part Number | ZXT12P12D | |
Pin Count | 8 | |
JESD-30 Code | S-PDSO-G8 | |
Qualification Status | Not Qualified | |
Polarity | PNP | |
Element Configuration | Dual | |
Transistor Application | SWITCHING | |
Gain Bandwidth Product | 85MHz | |
Transistor Type | 2 PNP (Dual) | |
Collector Emitter Voltage (VCEO) | 270mV | |
Max Collector Current | 3A | |
DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 1A 2V | |
Current - Collector Cutoff (Max) | 100nA | |
JEDEC-95 Code | MO-187AA | |
Vce Saturation (Max) @ Ib, Ic | 270mV @ 30mA, 3A | |
Transition Frequency | 85MHz | |
Collector Base Voltage (VCBO) | -20V | |
Emitter Base Voltage (VEBO) | 7.5V | |
Continuous Collector Current | -3A | |
Height | 950μm | |
Length | 3.1mm | |
Width | 3.1mm | |
RoHS Status | RoHS Compliant | |
Lead Free | Lead Free |