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ZXT13P12DE6TA Технические параметры

Diodes Incorporated  ZXT13P12DE6TA technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6
Number of Pins 6Pins
Weight 14.996898mg
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 12V
Number of Elements 1 Element
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Voltage - Rated DC -12V
Max Power Dissipation 1.1W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -4A
Frequency 55MHz
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number ZXT13P12D
Pin Count 6
Element Configuration Single
Power Dissipation 1.7W
Power - Max 1.1W
Transistor Application SWITCHING
Gain Bandwidth Product 55MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 12V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 1A 2V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 175mV @ 400mA, 4A
Transition Frequency 55MHz
Max Breakdown Voltage 12V
Collector Base Voltage (VCBO) 20V
Emitter Base Voltage (VEBO) 7.5V
Continuous Collector Current -4A
Height 1.3mm
Length 3.1mm
Width 1.8mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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