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ZXTC6717MCQTA Технические параметры
Diodes Incorporated ZXTC6717MCQTA technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Arrays | |
| Марка | ||
| Mounting Type | Surface Mount | |
| Package / Case | 8-VDFN Exposed Pad | |
| Surface Mount | YES | |
| Supplier Device Package | W-DFN3020-8 | |
| Number of Terminals | 8Terminals | |
| Transistor Element Material | SILICON | |
| Mfr | Diodes Incorporated | |
| Package | Tape & Reel (TR) | |
| Product Status | Active | |
| Current-Collector (Ic) (Max) | 4.5A, 4A | |
| Factory Pack QuantityFactory Pack Quantity | 3000 | |
| Manufacturer | Diodes Incorporated | |
| Brand | Diodes Incorporated | |
| RoHS | Details | |
| Package Description | W-DFN3020-8 | |
| Package Style | SMALL OUTLINE | |
| Moisture Sensitivity Levels | 1 | |
| Package Body Material | PLASTIC/EPOXY | |
| Reflow Temperature-Max (s) | 40 | |
| Rohs Code | Yes | |
| Transition Frequency-Nom (fT) | 120 MHz | |
| Manufacturer Part Number | ZXTC6717MCQTA | |
| Package Shape | RECTANGULAR | |
| Number of Elements | 2 Elements | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | DIODES INC | |
| Risk Rank | 5.75 | |
| Series | - |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Packaging | Reel | |
| JESD-609 Code | e4 | |
| Pbfree Code | Yes | |
| Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) | |
| Additional Feature | HIGH RELIABILITY | |
| Subcategory | Transistors | |
| Terminal Position | DUAL | |
| Terminal Form | NO LEAD | |
| Peak Reflow Temperature (Cel) | 260 | |
| Reach Compliance Code | compliant | |
| Reference Standard | AEC-Q101 | |
| JESD-30 Code | R-PDSO-N8 | |
| Configuration | SEPARATE, 2 ELEMENTS | |
| Case Connection | COLLECTOR | |
| Power - Max | 1.13W | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | NPN AND PNP | |
| Product Type | BJTs - Bipolar Transistors | |
| Transistor Type | NPN, PNP Complementary | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 200mA, 2V, 300 @ 100mA, 2V | |
| Current - Collector Cutoff (Max) | 100nA | |
| Vce Saturation (Max) @ Ib, Ic | 310mV @ 50mA, 4.5A, 310mV @ 150mA, 4A | |
| Voltage - Collector Emitter Breakdown (Max) | 15V, 12V | |
| Frequency - Transition | 120MHz, 110MHz | |
| Collector Current-Max (IC) | 4.5 A | |
| DC Current Gain-Min (hFE) | 150 | |
| Collector-Emitter Voltage-Max | 15 V | |
| Product Category | Bipolar Transistors - BJT |
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