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ZXTDBM832TA Технические параметры

Diodes Incorporated  ZXTDBM832TA technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Arrays
Марка
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-VDFN Exposed Pad
Number of Pins 832Pins
Supplier Device Package 8-MLP (3x2)
Collector-Emitter Breakdown Voltage 20V
Collector-Emitter Saturation Voltage 210mV
Current-Collector (Ic) (Max) 4.5A
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 20V
Max Power Dissipation 1.7W
Current Rating 4.5A
Base Part Number ZXTDBM832
Свойство продукта Значение свойства
Polarity NPN
Element Configuration Dual
Power - Max 1.7W
Gain Bandwidth Product 140MHz
Transistor Type 2 NPN (Dual)
Collector Emitter Voltage (VCEO) 270mV
Max Collector Current 4.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2A 2V
Current - Collector Cutoff (Max) 25nA
Vce Saturation (Max) @ Ib, Ic 270mV @ 125mA, 4.5A
Voltage - Collector Emitter Breakdown (Max) 20V
Max Breakdown Voltage 20V
Frequency - Transition 140MHz
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) 7.5V
Continuous Collector Current 4.5A
Height 1mm
Length 3mm
Width 2mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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ZXTDBM832TA Документы

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