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ZXTN10150DZTA Технические параметры

Diodes Incorporated  ZXTN10150DZTA technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 4Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 150V
Current-Collector (Ic) (Max) 1A
Number of Elements 1 Element
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Max Power Dissipation 1.5W
Свойство продукта Значение свойства
Terminal Position SINGLE
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Frequency 135MHz
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
JESD-30 Code R-PSSO-F3
Qualification Status Not Qualified
Configuration SINGLE
Power Dissipation 1.5W
Case Connection COLLECTOR
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 150V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 250mV
Current - Collector Cutoff (Max) 500nA ICBO
Transition Frequency 135MHz
Collector Base Voltage (VCBO) 150V
Emitter Base Voltage (VEBO) 7V
RoHS Status ROHS3 Compliant
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ZXTN10150DZTA Документы

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