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ZXTN19100CZTA Технические параметры

Diodes Incorporated  ZXTN19100CZTA technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 4Pins
Weight 130.492855mg
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 100V
Collector-Emitter Saturation Voltage 65mV
Number of Elements 1 Element
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Max Power Dissipation 4.46W
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Frequency 150MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number ZXTN19100C
Свойство продукта Значение свойства
Pin Count 3
JESD-30 Code R-PSSO-F3
Element Configuration Single
Power Dissipation 4.46W
Case Connection COLLECTOR
Power - Max 2.4W
Transistor Application SWITCHING
Gain Bandwidth Product 150MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 5.25A
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 100mA 2V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 350mV @ 525mA, 5.25A
Transition Frequency 150MHz
Max Breakdown Voltage 100V
Collector Base Voltage (VCBO) 200V
Emitter Base Voltage (VEBO) 7V
Continuous Collector Current 5.25A
Height 1.6mm
Length 4.6mm
Width 2.6mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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ZXTN19100CZTA Документы

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