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ZXTN2007GTA Технические параметры

Diodes Incorporated  ZXTN2007GTA technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка
Factory Lead Time 15 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4Pins
Weight 7.994566mg
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 30V
Number of Elements 1 Element
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4Terminations
ECCN Code EAR99
Voltage - Rated DC 30V
Max Power Dissipation 3W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 7A
Свойство продукта Значение свойства
Frequency 140MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number ZXTN2007
Pin Count 4
Element Configuration Single
Power Dissipation 3W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 140MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 7A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1A 1V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 220mV @ 300mA, 6.5A
Transition Frequency 140MHz
Max Breakdown Voltage 30V
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 7V
Continuous Collector Current 7A
Height 1.65mm
Length 6.7mm
Width 3.7mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

ZXTN2007GTA Документы

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