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ZXTN2010ASTZ Технические параметры

Diodes Incorporated  ZXTN2010ASTZ technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка
Mount Through Hole
Package / Case TO-92
Number of Pins 3Pins
Collector-Emitter Breakdown Voltage 60V
Number of Elements 1 Element
Packaging Tape & Box (TB)
Published 2006
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 60V
Max Power Dissipation 1W
Terminal Form WIRE
Peak Reflow Temperature (Cel) 260
Current Rating 4.5A
Свойство продукта Значение свойства
Frequency 130MHz
Time@Peak Reflow Temperature-Max (s) 40
Polarity NPN
Element Configuration Single
Power Dissipation 710mW
Transistor Application SWITCHING
Gain Bandwidth Product 130MHz
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 4.5A
Transition Frequency 130MHz
Max Breakdown Voltage 60V
Collector Base Voltage (VCBO) 150V
Emitter Base Voltage (VEBO) 7V
DC Current Gain-Min (hFE) 20
Continuous Collector Current 4.5A
Height 4.01mm
Length 4.77mm
Width 2.41mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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ZXTN2010ASTZ Документы

ZXTN2010ASTZ brand manufacturers: Diodes Incorporated, Anli stock, ZXTN2010ASTZ reference price.Diodes Incorporated. ZXTN2010ASTZ parameters, ZXTN2010ASTZ Datasheet PDF and pin diagram description download.You can use the ZXTN2010ASTZ Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find ZXTN2010ASTZ pin diagram and circuit diagram and usage method of function,ZXTN2010ASTZ electronics tutorials.You can download from the Anli.