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ZXTN2010ZTA Технические параметры

Diodes Incorporated  ZXTN2010ZTA technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка
Factory Lead Time 15 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 4Pins
Weight 51.993025mg
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 80V
Collector-Emitter Saturation Voltage 170mV
Number of Elements 1 Element
hFEMin 20
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Voltage - Rated DC 60V
Max Power Dissipation 2.1W
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Current Rating 5A
Frequency 130MHz
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number ZXTN2010
Pin Count 3
JESD-30 Code R-PSSO-F3
Element Configuration Single
Power Dissipation 1.5W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 130MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 5A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 2A 1V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 230mV @ 300mA, 6A
Transition Frequency 130MHz
Max Breakdown Voltage 60V
Collector Base Voltage (VCBO) 150V
Emitter Base Voltage (VEBO) 7V
Max Junction Temperature (Tj) 150°C
Continuous Collector Current 5A
Height 1.6mm
Length 4.6mm
Width 2.6mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

ZXTN2010ZTA Документы

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