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ZXTN25100DFHTA Технические параметры

Diodes Incorporated  ZXTN25100DFHTA technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка
Factory Lead Time 11 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3Pins
Weight 7.994566mg
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 100V
Collector-Emitter Saturation Voltage 330mV
Number of Elements 1 Element
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Max Power Dissipation 1.81W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Frequency 175MHz
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number ZXTN25100D
Pin Count 3
Element Configuration Single
Power Dissipation 1.81W
Power - Max 1.25W
Transistor Application SWITCHING
Gain Bandwidth Product 175MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 2.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 10mA 2V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 330mV @ 250mA, 2.5A
Transition Frequency 175MHz
Max Breakdown Voltage 100V
Collector Base Voltage (VCBO) 180V
Emitter Base Voltage (VEBO) 7V
Height 1mm
Length 3.05mm
Width 1.4mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

ZXTN25100DFHTA Документы

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