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ZXTN25100DGQTA Технические параметры
Diodes Incorporated ZXTN25100DGQTA technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Single | |
| Марка | ||
| Factory Lead Time | 13 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-261-4, TO-261AA | |
| Collector-Emitter Breakdown Voltage | 100V | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2015 | |
| JESD-609 Code | e3 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| ECCN Code | EAR99 | |
| Terminal Finish | Matte Tin (Sn) |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Max Power Dissipation | 1.2W | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | not_compliant | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Power - Max | 1.2W | |
| Transistor Type | NPN | |
| Collector Emitter Voltage (VCEO) | 500mV | |
| Max Collector Current | 3A | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 10mA 2V | |
| Current - Collector Cutoff (Max) | 50nA ICBO | |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 600mA, 3A | |
| Max Breakdown Voltage | 100V | |
| Frequency - Transition | 175MHz | |
| RoHS Status | ROHS3 Compliant |
ZXTN25100DGQTA Документы
- Environmental InformationDiodes RoHS 3 Cert
- DatasheetsZXTN25100DG
- PCN Design/SpecificationMult Devices 28/Feb/2018
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