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ZXTP19100CZTA Технические параметры

Diodes Incorporated  ZXTP19100CZTA technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 4Pins
Weight 130.492855mg
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 100V
Collector-Emitter Saturation Voltage -220mV
Number of Elements 1 Element
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Max Power Dissipation 4.46W
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Frequency 142MHz
Time@Peak Reflow Temperature-Max (s) 40
Свойство продукта Значение свойства
Pin Count 3
JESD-30 Code R-PSSO-F3
Element Configuration Single
Power Dissipation 4.46W
Case Connection COLLECTOR
Power - Max 2.4W
Transistor Application SWITCHING
Gain Bandwidth Product 142MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 100mA 2V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 295mV @ 200mA, 2A
Transition Frequency 142MHz
Max Breakdown Voltage 100V
Collector Base Voltage (VCBO) 110V
Emitter Base Voltage (VEBO) -7V
Height 1.6mm
Length 4.6mm
Width 2.6mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

ZXTP19100CZTA Документы

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